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PDF IRF7319 Data sheet ( Hoja de datos )
| Número de pieza | IRF7319 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7319 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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PD - 9.1606A
PRELIMINARY
IRF7319
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
Description
N -C H AN N EL M OSF ET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 30V -30V
6 D2
G2 4
5 D2
P-C H ANN EL MO SFE T
RDS(on) 0.029Ω 0.058Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V DS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
30 -30
± 20
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140
4.0 -2.8
0.20
5.0 -5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
9/15/97
1 page  
N-Channel
IRF7319
1200
900
600
V GS = 0V ,
f = 1MH z
C is s = Cgs + C g d , Cds SH OR TED
C rss = Cg d
C oss = Cds + C gd
C is s
C oss
300 Crss
0A
1 10 100
V D S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.8A
16
VDS = 15V
12
8
4
0
0 10 20 30
QG, Total Gate Charge (nC)
40
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
P DM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7319.PDF ] | |
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