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PDF IRF7317 Data sheet ( Hoja de datos )
| Número de pieza | IRF7317 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7317 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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PD - 9.1568B
PRELIMINARY
IRF7317
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 20V -20V
6 D2
Description
Fifth Generation HEXFETs from International Rectifier
G2
45
P-CHANNEL MOSFET
Top V iew
D2
RDS(on) 0.029Ω 0.058Ω
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
VDS
20
-20
Gate-Source Voltage
VGS ± 12
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
6.6
5.3
-5.3
-4.3
Pulsed Drain Current
IDM 26
-21
Continuous Source Current (Diode Conduction)
IS 2.5
-2.5
Maximum Power Dissipation
TA = 25°C
TA = 70°C
PD
2.0
1.3
Single Pulse Avalanche Energy
EAS 100
150
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
IAR
EAR
dv/dt
4.1 -2.9
0.20
5.0 -5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
12/9/97
1 page  
N-Channel
IRF7317
1600
1200
800
C is s
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds S HO RTE D
C rss = C gd
C oss = C ds + C gd
Coss
Crss
400
0A
1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 6.0A
8
VDS = 10V
6
4
2
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7317.PDF ] | |
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