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PDF IRF7306 Data sheet ( Hoja de datos )
| Número de pieza | IRF7306 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7306 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 9.1241C
IRF7306
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
To p Vie w
VDSS = -30V
RDS(on) = 0.10Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
8/25/97
1 page  
IRF7306
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC, Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
-10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7306.PDF ] | |
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