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PDF IRF730 Data sheet ( Hoja de datos )
| Número de pieza | IRF730 | |
| Descripción | N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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1. IRF730 transistor datasheet  Hay una vista previa y un enlace de descarga de IRF730 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® IRF730
N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF730
400 V
<1Ω
5.5 A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
400
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
400
± 20
5.5
3.5
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
22
100
Derating Factor
0.8
dv/dt(1) Peak Diode Recovery voltage slope
4.0
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤5.5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRF730
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF730.PDF ] | |
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