|
|
PDF IRF730 Data sheet ( Hoja de datos )
| Número de pieza | IRF730 | |
| Descripción | PowerMOS transistor Avalanche energy rated | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
1. IRF730 transistor datasheet  Hay una vista previa y un enlace de descarga de IRF730 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF730
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 400 V
ID = 7.2 A
RDS(ON) ≤ 1 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF730 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
± 30
7.2
4.6
29
125
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 4.8 A;
tp = 0.23 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 7.2 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
290
9.4
7.2
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
March 1999
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF730
15 VGS, Gate-Source voltage (Volts)
ID = 7.2 A
Tj = 25 C
240 V
PHP5N40
80 V
VDD = 320 V
10
5
0
0 10 20 30 40 50 60 70 80
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
1000 Switching times (ns)
VDD = 200 V
VGS = 10 V
RD = 27 Ohms
Tj = 25 C
PHP5N40
100 td(off)
tf
tr
td(on)
10
0 10 20 30 40
RG, Gate resistance (Ohms)
50
60
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
20 IF, Source-Drain diode current (Amps)
VGS = 0 V
15
PHP5N40
10
150 C
Tj = 25 C
5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSDS, Source-Drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Non-repetitive Avalanche current, IAS (A)
10
25 C
Tj prior to avalanche = 125 C
1
VDS
ID
0.1
1E-06
tp
PHP7N40E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
10
Tj prior to avalanche = 25 C
125 C
1
0.1
0.01
1E-06
PHP7N40E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
March 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF730.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF730 | PowerMOS transistor Avalanche energy rated | NXP Semiconductors |
| IRF730 | N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET |  STMicroelectronics |
| IRF730 | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |  Intersil Corporation |
| IRF730 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |  Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |