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IRF7241 の電気的特性と機能

IRF7241のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7241
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7241 Datasheet, IRF7241 PDF,ピン配置, 機能
q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-40V
PD- 94087
IRF7241
HEXFET® Power MOSFET
RDS(on) max (mΩ)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
A
8D
New trench HEXFET® Power MOSFETs from S 2
7D
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance S 3
6D
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power G
4
5D
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
Top View
in battery and load management applications.
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
1/26/01

1 Page





IRF7241 pdf, ピン配列
1000
100
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
0.1
0.01
0.1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
IRF7241
1
-2.70V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
2.0 ID = -6.2A
1.5
1.00
0.10
0.01
2.5
TJ = 25°C
VDS = -25V
20µs PULSE WIDTH
3.0 3.5 4.0 4.5
-VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
www.irf.com
1.0
0.5
VGS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7241 電子部品, 半導体
IRF7241
0.10 0.08
0.08
0.06
0.04 ID = -6.2A
0.02
2
6 10 14
-VGS, Gate -to -Source Voltage (V)
18
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.06
VGS = -4.5V
0.04
0.02
0
VGS = -10V
5 10 15 20
-ID , Drain Current (A)
25
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



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[ IRF7241 データシート.PDF ]


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共有リンク

Link :


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IRF7241

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IRF7241PbF

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