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IRF7204のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-20V/ Rds(on)=0.060ohm/ Id=-5.3A)」です。 |
部品番号 | IRF7204 |
| |
部品説明 | Power MOSFET(Vdss=-20V/ Rds(on)=0.060ohm/ Id=-5.3A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7204ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PD - 9.1103B
IRF7204
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
wwlw.dPat-aCshheaetn4un.ceolmMOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S1
S2
A
8D
7D
VDSS = -20V
S3
6 D RDS(on) = 0.060Ω
G4
5D
To p V ie w
ID = -5.3A
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-5.3
-4.2
-21
2.5
0.020
± 12
-1.7
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max.
50
Units
°C/W
8/25/97
1 Page www.datasheet4u.com
IRF7204
-VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRF7204
www-.1da0tVasheet4u.com
QGS
VG
QG
QGD
Charge
Fig 12a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF7204 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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