IRF7104 Datasheet PDF - International Rectifier
| Part Number | IRF7104 | |
| Description | HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF7104 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
S1
G1
S2
G2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
PD - 9.1096B
IRF7104
HEXFET® Power MOSFET
1
8 D1
VDSS = -20V
2 7 D1
36
45
Top View
D 2 RDS(on) = 0.250Ω
D2
ID = -2.3A
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max. Units
62.5 °C/W
8/25/97
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TA , Ambient Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
IRF7104
V DS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF7104 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF7104.PDF Datasheet ] | |
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