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PDF IRF7103Q Data sheet ( Hoja de datos )
| Número de pieza | IRF7103Q | |
| Descripción | Power MOSFET(Vdss=50V) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93944C
AUTOMOTIVE MOSFET
IRF7103Q
Typical Applications
q Anti-lock Braking Systems (ABS)
q Electronic Fuel Injection
q Power Doors, Windows & Seats
Benefits
q Advanced Process Technology
q Dual N-Channel MOSFET
q Ultra Low On-Resistance
q 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
VDSS
50V
HEXFET® Power MOSFET
RDS(on) max (mΩ)
130@VGS = 10V
200@VGS = 4.5V
ID
3.0A
1.5A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Parameter
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power DissipationS
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt U
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient S
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
03/14/02
1 page  
IRF7103Q
3.0
2.4
1.8
1.2
0.6
0.0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7103Q.PDF ] | |
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