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PDF IRF7101 Data sheet ( Hoja de datos )
| Número de pieza | IRF7101 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7101 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 9.871B
IRF7101
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
1
S1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
VDSS = 20V
RDS(on) = 0.10Ω
ID = 3.5A
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
Max.
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max Units
62.5 °C/W
8/25/97
1 page  
IRF7101
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
10
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7101.PDF ] | |
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