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PDF IRF6691 Data sheet ( Hoja de datos )
| Número de pieza | IRF6691 | |
| Descripción | HEXFET Power MOSFET plus Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD - 95867A
IRF6691
HEXFET® Power MOSFET plus Schottky Diode
l Application Specific MOSFETs
l Integrates Monolithic Trench Schottky Diode
l Ideal for CPU Core DC-DC Converters
VDSS
20V
l Low Conduction Losses
l Low Reverse Recovery Losses
l Low Switching Losses
l Low Reverse Recovery Charge and Low Vf
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
RDS(on) max
2.5mΩ@VGS = 4.5V
1.8mΩ@VGS = 10V
Qg(typ.)
47nC
MT
DirectFET ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ SX ST
MQ MX MT
Description
The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (RDS(on)), reverse recovery charge (Qrr) and source to drain
voltage (VSD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
20
±12
180
32
26
260
2.8
1.8
89
0.022
-40 to + 150
V
A
W
W/°C
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Notes
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
through are on page 10
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
www.irf.com
1
11/3/04
1 page  
IRF6691
200
175
150
125
100
75
50
25
0
25
50 75 100 125
TC , Case Temperature (°C)
150
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.678
17.30
τi (sec)
0.000860
0.577560
τ3 τ3
τ4 τ4
17.57 8.940000
9.470 106.0000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| PDF Descargar | [ Datasheet IRF6691.PDF ] | |
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