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IRF6618 の電気的特性と機能

IRF6618のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6618
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6618 Datasheet, IRF6618 PDF,ピン配置, 機能
PD - 94726D
IRF6618/IRF6618TR1
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
VDSS
30V
RDS(on) max
2.2m@VGS = 10V
3.4m@VGS = 4.5V
Qg
43 nC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MT DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
fjParameter
Junction-to-Ambient
gJunction-to-Ambient
hJunction-to-Ambient
iJunction-to-Case
Junction-to-PCB Mounted
Notes  through ˆ are on page 9
www.irf.com
Max.
30
±20
170
30
24
240
2.8
1.8
89
0.022
-40 to + 150
Typ.
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
210
24
Max.
45
–––
–––
1.4
–––
Units
V
A
W
W/°C
°C
Units
mJ
A
Units
°C/W
1
11/3/04

1 Page





IRF6618 pdf, ピン配列
1000
100
10
2.7V
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
www.irf.com
100
IRF6618/IRF6618TR1
1000
100
TOP
BOTTOM
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
2.7V
10
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.5
ID = 30A
VGS = 10V
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
6.0
ID= 24A
5.0
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
60
3


3Pages


IRF6618 電子部品, 半導体
IRF6618/IRF6618TR1
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
6
www.irf.com

6 Page



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