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IRF6617TR1 の電気的特性と機能

IRF6617TR1のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6617TR1
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6617TR1 Datasheet, IRF6617TR1 PDF,ピン配置, 機能
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
PD - 95847
IRF6617
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max Qg(typ.)
8.1m@VGS = 10V
11nC
10.3m@VGS = 4.5V
ST DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, IMPROVING previous best thermal resistance by 80%.
The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
EAS
IAR
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fjRθJA
gjRθJA
hjRθJA
ijRθJC
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Notes  through ˆ are on page 2
www.irf.com
Max.
30
±20
55
14
11
120
2.1
1.4
42
27
12
0.017
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
3/12/04

1 Page





IRF6617TR1 pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
0.1
0.1
60µs PULSE WIDTH
2.5V Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
100.0
10.0 TJ = 150°C
TJ = 25°C
1.0
0.1
1.0
VDS = 15V
60µs PULSE WIDTH
2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
6.0
Fig 3. Typical Transfer Characteristics
IRF6617
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
2.5V 60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 15A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
12
ID= 12A
10
8
6
4
VDS= 24V
VDS= 15V
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
2
0
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRF6617TR1 電子部品, 半導体
IRF6617
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
VDD +
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
6
3
5
4
7
1
2
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
6 www.irf.com

6 Page



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共有リンク

Link :


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