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PDF IRF6613 Data sheet ( Hoja de datos )
| Número de pieza | IRF6613 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Application Specific MOSFETs
l Ideal for Synchronous Rectification in Isolated
DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 95881
IRF6613
VDSS
40V
HEXFET® Power MOSFET
RDS(on) max
3.4mΩ@VGS = 10V
4.1mΩ@VGS = 4.5V
Qg(typ.)
42nC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
MT
DirectFET ISOMETRIC
Description
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
gPower Dissipation
gPower Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
fÃLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fjRθJA
gjRθJA
hjRθJA
ijRθJC
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Notes through are on page 2
www.irf.com
1
8/18/04
1 page  
7.0
ID = 23A
6.0
5.0
4.0 TJ = 125°C
3.0
2.0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
www.irf.com
IRF6613
1000
800
ID
TOP 6.7A
8.1A
BOTTOM 18A
600
400
200
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF6613.PDF ] | |
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