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IRF6607TR1 の電気的特性と機能

IRF6607TR1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6607TR1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6607TR1 Datasheet, IRF6607TR1 PDF,ピン配置, 機能
PD - 94574B
IRF6607
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
VDSS
30V
RDS(on) max Qg(typ.)
3.3m@VGS = 10V
50nC
4.4m@VGS = 4.5V
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface
Mount Techniques
MT
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
Linear Derating Factor
30
±12
94
27
22
220
3.6
2.3
42
0.029
V
A
W
W/°C
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to + 150
°C
Thermal Resistance
Parameter
fjRθJA
gjRθJA
hjRθJA
ijRθJC
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Notes  through ˆ are on page 11
www.irf.com
Typ.
–––
12.5
20
–––
–––
Max.
35
–––
–––
3.0
1.0
Units
°C/W
1
4/8/04

1 Page





IRF6607TR1 pdf, ピン配列
IRF6607
1000
100
10
TOP
BOTTOM
VGS
12V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
2.0V
1
0.1
0.01
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
12V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
2.0V
10
2.0V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000.00
100.00 TJ = 150°C
10.00
1.00
0.10
2.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
I D = 25A
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF6607TR1 電子部品, 半導体
IRF6607
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
6
120
ID
TOP
8.9A
100 16A
BOTTOM
20A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF6607TR1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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