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IRF6601のメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET(Vdss=20V)」です。 |
部品番号 | IRF6601 |
| |
部品説明 | DirectFET Power MOSFET(Vdss=20V) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6601ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount
Techniques
PD - 94366C
IRF6601
DirectFETTM Power MOSFET
VDSS
20V
RDS(on) max
3.8mΩ@VGS = 10V
5.0mΩ@VGS = 4.5V
ID
26A
21A
DirectFET ISOMETRIC
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Max.
20
85
26
20
200
3.6
2.3
42
28
±20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Symbol
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB mounted
Typ.
–––
–––
–––
–––
–––
Max.
35
12.5
20
3.0
1.0
Units
°C/W
1
3/25/02
1 Page IRF6601
1000
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
1000
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
10
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 150°C
2.0
I D = 26A
1.5
1.0
10
2.5
VDS = 15V
20µs PULSE WIDTH
3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF6601
0.006
0.005
VGS = 4.5V
0.004
VGS = 10V
0.02
0.01
ID = 26A
0.003
0
60 120 180
ID , Drain Current (A)
240
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
0.00
2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
160
ID
TOP
9.4A
17A
BOTTOM
21A
120
80
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
40
0
25 50 75 100
Starting T , JuJnction Temperature
125 150
( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
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