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IRF644N の電気的特性と機能

IRF644NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF644N
部品説明 Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF644N Datasheet, IRF644N PDF,ピン配置, 機能
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
www.irf.com
PD - 94107
IRF644N
IRF644NS
IRF644NL
HEXFET® Power MOSFET
D
VDSS = 250V
RDS(on) = 240m
G
ID = 14A
S
TO-220AB
IRF644N
D2Pak
IRF644NS
TO-262
IRF644NL
Max.
14
9.9
56
150
1.0
± 20
180†
8.4
15
7.9
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
1
3/15/01

1 Page





IRF644N pdf, ピン配列
IRF644N/644NS/644NL
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10 5.0V
BOTTOM 4.5V
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10 5.0V
BOTTOM 4.5V
4.5V
1 4.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 175° C
TJ = 25° C
10
VDS = 50V
20µs PULSE WIDTH
1
4 6 8 10 11 13 15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 14A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF644N 電子部品, 半導体
IRF644N/644NS/644NL
15V
VDS
L
D R IV E R
RG
20V
tp
D .U.T
IA S
0 .0 1
+
-
VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
300
TOP
ID
3.4A
5.9A
240 BOTTOM 8.4A
180
120
60
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

Link :


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