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IRF640S の電気的特性と機能

IRF640SのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF640S
部品説明 N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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IRF640S Datasheet, IRF640S PDF,ピン配置, 機能
® IRF640S
N - CHANNEL 200V - 0.150- 18A TO-263
MESH OVERLAYMOSFET
TYPE
VDSS
RDS(on)
ID
IRF640S
200 V < 0.18 18 A
s TYPICAL RDS(on) = 0.150
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
3
1
D2PAK
TO-263
(suffix ”T4”)
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM ()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
Un it
200 V
200 V
± 20
V
18 A
11 A
72 A
125 W
1.0 W /o C
5
-65 to 150
150
( 1) ISD 18A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
September 1999
1/8

1 Page





IRF640S pdf, ピン配列
IRF640S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 100 V ID = 9 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 18 A VGS = 10V
Min.
Typ.
13
27
55
10
21
Max.
17
35
72
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 18 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
21
25
50
Max.
27
32
65
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 18 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 18 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
18
72
Unit
A
A
1.5
240
1.8
15
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


IRF640S 電子部品, 半導体
IRF640S
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



ページ 合計 : 8 ページ
 
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