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PDF IRF634NS Data sheet ( Hoja de datos )
| Número de pieza | IRF634NS | |
| Descripción | Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF634NS (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
Fifth GenerationHEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
www.irf.com
PD - 94310
IRF634N
IRF634NS
IRF634NL
HEXFET® Power MOSFET
D
VDSS = 250V
RDS(on) = 0.435Ω
G
ID = 8.0A
S
TO-220AB
IRF634N
D2Pak
IRF634NS
TO-262
IRF634NL
Max.
8.0
5.6
32
88
3.8
0.59
± 20
110
4.8
8.8
7.3
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
1
9/10/01
1 page  
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF634N/S/L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
5 Page 
IRF634N/S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
330.00
(14.173)
MAX.
6 0.0 0 (2.36 2)
M IN .
Notes:
NO TES :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220A package
Starting TJ = 25°C, L = 9.5mH
RG = 25Ω, IAS = 4.8A,VGS=10V
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRF634N),
Industrial (IRF634NS and IRF634NL) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 9/00
www.irf.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF634NS.PDF ] | |
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