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IRF630S の電気的特性と機能

IRF630SのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF630S
部品説明 N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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IRF630S Datasheet, IRF630S PDF,ピン配置, 機能
® IRF630S
N - CHANNEL 200V - 0.35- 9A - D2PAK
MESH OVERLAYMOSFET
TYPE
VDSS
RDS(on)
ID
IRF630S
200 V < 0.40
9A
s TYPICAL RDS(on) = 0.35
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM ()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
200
200
± 20
9
5.7
36
70
0.56
5
-65 to 150
150
( 1) ISD 9A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
December 1998
1/8

1 Page





IRF630S pdf, ピン配列
IRF630S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 100 V ID = 4.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 9 A VGS = 10 V
Min.
Typ.
10
15
31
7.5
9
Max.
14
20
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 9 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
12
12
25
Max.
17
17
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 9 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 9 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
9
36
Unit
A
A
170
0.95
11
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


IRF630S 電子部品, 半導体
IRF630S
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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