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IRF630SのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET」です。 |
部品番号 | IRF630S |
| |
部品説明 | N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとIRF630Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
® IRF630S
N - CHANNEL 200V - 0.35Ω - 9A - D2PAK
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRF630S
200 V < 0.40 Ω
9A
s TYPICAL RDS(on) = 0.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM (•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
200
200
± 20
9
5.7
36
70
0.56
5
-65 to 150
150
( 1) ISD ≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
December 1998
1/8
1 Page IRF630S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 100 V ID = 4.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 9 A VGS = 10 V
Min.
Typ.
10
15
31
7.5
9
Max.
14
20
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 9 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
12
12
25
Max.
17
17
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 9 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 9 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
9
36
Unit
A
A
170
0.95
11
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
3Pages IRF630S
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRF630S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF630 | 200V/9A POWER MOSFET | TAITRON |
IRF630 | N-channel TrenchMOS transistor | NXP Semiconductors |
IRF630 | N-CHANNEL MOSFET | STMicroelectronics |
IRF630 | 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |