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IRF630 の電気的特性と機能

IRF630のメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF630
部品説明 N-channel TrenchMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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IRF630 Datasheet, IRF630 PDF,ピン配置, 機能
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 9 A
RDS(ON) 400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
9
6.3
36
88
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100

1 Page





IRF630 pdf, ピン配列
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 9 A; VGS = 0 V
trr
Reverse recovery time
IF = 9 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
- - 9A
- - 36 A
- 0.85 1.2 V
- 92 - ns
- 0.5 - µC
August 1999
3
Rev 1.100


3Pages


IRF630 電子部品, 半導体
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
Source-Drain Diode Current, IF (A)
10
VGS = 0 V
9
8
7
6
175 C
5 Tj = 25 C
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Source-Drain Voltage, VSDS (V)
1.1 1.2
Fig.13. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Maximum Avalanche Current, IAS (A)
10
1 Tj prior to avalanche = 150 C
25 C
0.1
0.001
0.01 0.1
1
Avalanche time, tAV (ms)
10
Fig.14. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tAV);
unclamped inductive load
August 1999
6
Rev 1.100

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF630

200V/9A POWER MOSFET

TAITRON
TAITRON
IRF630

N-channel TrenchMOS transistor

NXP Semiconductors
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IRF630

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics
IRF630

9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation


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