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What is IRF620?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS".


IRF620 Datasheet PDF - STMicroelectronics

Part Number IRF620
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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Total 9 Pages



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No Preview Available ! IRF620 datasheet, circuit

IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF620
IRF620FI
VDSS
200 V
200 V
R DS( on)
< 0.8
< 0.8
ID
6A
4A
s TYPICAL RDS(on) = 0.55
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC
ID Drain Current (cont.) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Value
I RF 62 0
I RF 620FI
200
200
± 20
64
42
24 24
70 30
0. 56
0. 24
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9

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IRF620 equivalent
Transconductance
IRF620/FI
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
5/9


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF620 electronic component.


Information Total 9 Pages
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