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IRF5YZ48CM の電気的特性と機能

IRF5YZ48CMのメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5YZ48CM
部品説明 POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5YZ48CM Datasheet, IRF5YZ48CM PDF,ピン配置, 機能
PD - 94019A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5YZ48CM
55V, N-CHANNEL
Product Summary
Part Number
IRF5YZ48CM
BVDSS
55V
RDS(on) ID
0.02918A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
18*
18* A
72
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy
160
mJ
Avalanche Current
18 A
Repetitive Avalanche Energy
7.5 mJ
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
3.5
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
5/17/01

1 Page





IRF5YZ48CM pdf, ピン配列
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
IRF5YZ48CM
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 150° C
10
4.0
V DS =1525V
20µs PULSE WIDTH
5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 18A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5YZ48CM 電子部品, 半導体
IRF5YZ48CM
15V
VDS
L
RG
2V0GVS
tp
D .U .T.
IA S
0.01
D R IV E R
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
350
ID
TOP
8.0A
300 11.4A
BOTTOM 18A
250
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF5YZ48CM

POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.029ohm/ Id=18A*)

International Rectifier
International Rectifier


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