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IRF5Y31N20 の電気的特性と機能

IRF5Y31N20のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5Y31N20
部品説明 POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5Y31N20 Datasheet, IRF5Y31N20 PDF,ピン配置, 機能
PD - 94349A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y31N20
200V, N-CHANNEL
Product Summary
Part Number
IRF5Y31N20
BVDSS
200V
RDS(on) ID
0.09218A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Units
18*
14 A
72
100 W
0.8 W/°C
±20 V
170 mJ
18 A
10 mJ
1.7
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
1
01/07/02

1 Page





IRF5Y31N20 pdf, ピン配列
IRF5Y31N20
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
10 6.5V
BOTTOM 6.0V
1
0.1
0.1
6.0V
20µs PULSE WIDTH,TJ= 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
10 6.5V
BOTTOM 6.0V
6.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
6.0
V DS =1550V
20µs PULSE WIDTH
6.5 7.0 7.5 8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 18A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5Y31N20 電子部品, 半導体
IRF5Y31N20
15V
VDS
L
RG
2V0 VGS
tp
D .U .T.
IA S
0.01
D R IV E R
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
400
ID
TOP
8.0A
11.4A
BOTTOM 18A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF5Y31N20

POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*)

International Rectifier
International Rectifier


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