IRF5Y1310CM Datasheet PDF - International Rectifier
| Part Number | IRF5Y1310CM | |
| Description | POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.044ohm/ Id=18A*) | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF5Y1310CM download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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PD - 94058
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y1310CM
100V, N-CHANNEL
Product Summary
Part Number
IRF5Y1310CM
BVDSS
100V
RDS(on) ID
0.044Ω 18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Units
18*
18* A
72
100 W
0.8 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy ➁
210
mJ
Avalanche Current ➀
18 A
Repetitive Avalanche Energy ➀
10 mJ
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
3.8
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
01/17/01
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IRF5Y1310CM
35
30
25
20
15
10
5
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF5Y1310CM.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRF5Y1310CM | The function is POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.044ohm/ Id=18A*). International Rectifier | |
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