DataSheet.jp

IRF5NJ3315 の電気的特性と機能

IRF5NJ3315のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.08ohm/ Id=20A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5NJ3315
部品説明 POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.08ohm/ Id=20A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF5NJ3315ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

IRF5NJ3315 Datasheet, IRF5NJ3315 PDF,ピン配置, 機能
PD - 94287A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ3315
150V, N-CHANNEL
Product Summary
Part Number
IRF5NJ3315
BVDSS
150V
RDS(on)
0.08
ID
20A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
20
12
80
75
0.6
±20
165
12
7.5
3.0
-55 to 150
300 (for 5 s)
1.0 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
9/11/01

1 Page





IRF5NJ3315 pdf, ピン配列
IRF5NJ3315
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25 ° C
TJ = 150° C
10
V DS =1550V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 20A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5NJ3315 電子部品, 半導体
IRF5NJ3315
15V
VDS
L
RG
2V0 VGS
tp
D .U .T.
IA S
0.01
D R IV E R
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
400
ID
TOP
5.4A
7.6A
BOTTOM 12A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ IRF5NJ3315 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF5NJ3315

POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.08ohm/ Id=20A)

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap