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IRF5M4905 の電気的特性と機能

IRF5M4905のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.03ohm/ Id=-35A*)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5M4905
部品説明 POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.03ohm/ Id=-35A*)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5M4905 Datasheet, IRF5M4905 PDF,ピン配置, 機能
PD - 94155
HEXFET® POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M4905
55V, P-CHANNEL
Product Summary
Part Number
IRF5M4905
BVDSS
-55V
RDS(on) ID
0.03-35A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-254AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-35*
-35* A
-140
125 W
1.0 W/°C
±20 V
490 mJ
-35 A
12.5 mJ
2.2
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/26/01

1 Page





IRF5M4905 pdf, ピン配列
1000
100
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
1000
100
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
IRF5M4905
10
-4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 -4.5V
20µs PULSE WIDTH
TJ = 150 °C
1
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25° C
100
TJ = 150° C
10
V DS =1-525V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -35A
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5M4905 電子部品, 半導体
IRF5M4905
VDS
L
RG
-V2 0GVS
tp
D .U .T
IA S
0 .0 1
D R IV E R
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
1250
TOP
ID
-15.7A
-22A
1000
BOTTOM -35A
750
500
250
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50K
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF5M4905

POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.03ohm/ Id=-35A*)

International Rectifier
International Rectifier


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