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PDF IRF5851 Data sheet ( Hoja de datos )
| Número de pieza | IRF5851 | |
| Descripción | Power MOSFET(Vdss = +-20 V) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF5851 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
G1 1
S2 2
G2 3
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and RDS(on) reduction enables an
increase in current-handling capability.
PD-93998A
IRF5851
HEXFET® Power MOSFET
6 D1
N-Ch
VDSS 20V
5 S1
P-Ch
-20V
4 D2 RDS(on) 0.090Ω 0.135Ω
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
N-Channel
P-Channel
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
-20
-2.2
-1.7
-9.0
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
2/26/02
1 page  
N-Channel
IRF5851
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10 0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
10
www.irf.com
5
5 Page 
P-Channel
IRF5851
0.24 0.40
0.20
0.16
0.12 ID = -2.2A
0.08
2.0
3.0 4.0 5.0 6.0
-VGS, Gate -to -Source Voltage (V)
7.0
Fig 27. Typical On-Resistance Vs. Gate
Voltage
0.30
VGS = -2.5V
0.20
0.10
0
VGS = -4.5V
2468
-ID , Drain Current (A)
10
Fig 28. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IRF5851.PDF ] | |
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