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IRF5806のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-20V)」です。 |
部品番号 | IRF5806 |
| |
部品説明 | Power MOSFET(Vdss=-20V) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF5806ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-20V
PD - 93997
IRF5806
HEXFET® Power MOSFET
RDS(on) max
86mΩ@VGS = -4.5V
147mΩ@VGS = -2.5V
ID
-4.0A
-3.0A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
D1
A
6D
D2
5D
G3
4S
Top V ie w
Micro6™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Max.
62.5
Units
°C/W
1
10/04/00
1 Page IRF5806
100
10
VGS
TOP
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
1
-1.50V
100
10
VGS
TOP -7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25° C
10
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
1
1.0 1.5 2.0 2.5 3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -4.0A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF5806
0.20
0.15
0.10
ID = -4.0A
0.05
0.00
1.5
2.5 3.5 4.5 5.5 6.5 7.5
-VGS, Gate -to -Source Voltage (V)
8.5
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.20
0.16
0.12 VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.00
0
5 10 15
-ID , Drain Current ( A )
20
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRF5806 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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