DataSheet.jp

IRF5806 の電気的特性と機能

IRF5806のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-20V)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5806
部品説明 Power MOSFET(Vdss=-20V)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF5806ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRF5806 Datasheet, IRF5806 PDF,ピン配置, 機能
q Trench Technology
q Ultra Low On-Resistance
q P-Channel MOSFET
q Available in Tape & Reel
VDSS
-20V
PD - 93997
IRF5806
HEXFET® Power MOSFET
RDS(on) max
86m@VGS = -4.5V
147m@VGS = -2.5V
ID
-4.0A
-3.0A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
D1
A
6D
D2
5D
G3
4S
Top V ie w
Micro6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-20
-4.0
-3.3
-16.5
2.0
1.3
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Max.
62.5
Units
°C/W
1
10/04/00

1 Page





IRF5806 pdf, ピン配列
IRF5806
100
10
VGS
TOP
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
1
-1.50V
100
10
VGS
TOP -7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25° C
10
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
1
1.0 1.5 2.0 2.5 3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -4.0A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5806 電子部品, 半導体
IRF5806
0.20
0.15
0.10
ID = -4.0A
0.05
0.00
1.5
2.5 3.5 4.5 5.5 6.5 7.5
-VGS, Gate -to -Source Voltage (V)
8.5
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.20
0.16
0.12 VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.00
0
5 10 15
-ID , Drain Current ( A )
20
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRF5806 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF5800

Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)

International Rectifier
International Rectifier
IRF5800PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRF5801

Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

International Rectifier
International Rectifier
IRF5801PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap