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IRF5804のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-40V)」です。 |
部品番号 | IRF5804 |
| |
部品説明 | Power MOSFET(Vdss=-40V) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF5804ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
VDSS
-40V
PD - 94333
IRF5804
HEXFET® Power MOSFET
RDS(on) max (mΩ)
198@VGS = -10V
334@VGS = -4.5V
ID
-2.5A
-2.0A
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing D 1
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer D 2
with an extremely efficient device for use in battery and
load management applications.
G3
A
6D
5D
4S
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Top View
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
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Parameter
Maximum Junction-to-Ambient
Max.
-40
-2.5
-2.0
-10
2.0
1.3
0.016
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Max.
62.5
Units
°C/W
1
10/04/01
1 Page FOR REVIEW ONLY
IRF5804
100
VGS
TOP
-10V
-7.0V
-5.0V
-4.5V
10 -4.0V
-3.7V
-3.5V
BOTTOM -3.0V
1
0.1
0.01
0.1
-3.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
-10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
10 -3.5V
BOTTOM -3.0V
1
0.1
0.1
-3.0V
20µs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
3.0
VDS = -25V
20µs PULSE WIDTH
3.5 4.0 4.5
-VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
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2.0 ID = -2.5A
1.5
1.0
0.5
VGS = --10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF5804
FOR REVIEW ONLY
0.40
0.35
0.30
0.25
0.20 ID = -2.5A
0.15
0.10
4.0
5.0 6.0 7.0 8.0 9.0
-VGS, Gate -to -Source Voltage (V)
10.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.40
0.35
0.30
VGS = -4.5V
0.25
0.20
0.15
VGS = -10V
0.10
1 2 3 4 5 6 7 8 9 10
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF5804 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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