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IRF5802 の電気的特性と機能

IRF5802のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Id=0.9A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5802
部品説明 Power MOSFET(Vdss=150V/ Id=0.9A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5802 Datasheet, IRF5802 PDF,ピン配置, 機能
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD- 94086
IRF5802
HEXFET® Power MOSFET
RDS(on) max
1.2@VGS = 10V
ID
0.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
D1
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
D2
l Fully Characterized Avalanche Voltage
and Current
G3
6D
5D
4S
TSOP-6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.9
0.7
7.0
2.0
0.02
± 30
7.1
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient„
Notes  through † are on page 8
www.irf.com
Max.
62.5
Units
°C/W
1
1/23/01

1 Page





IRF5802 pdf, ピン配列
100
10
VGS
TOP 15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10 VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
IRF5802
6.0V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 25 ° C
TJ = 150° C
1
0.1
6
V DS = 50V
20µs PULSE WIDTH
8 10 12
VGS, Gate-to-Source Voltage (V)
14
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 0.9A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5802 電子部品, 半導体
IRF5802
2.80 6.00
2.40
4.00
2.00
1.60 ID = 0.54A
2.00 VGS = 10V
1.20
0.80
6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
QG
QGD
Charge
IG ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.00
0
24
ID , Drain Current (A)
6
Fig 13. Typical On-Resistance Vs. Drain
Current
25
ID
TOP
0.40A
0.70A
20 BOTTOM 0.90A
15
10
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA S
0.01
15V
DRIVE R
+
-
VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
5
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



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[ IRF5802 データシート.PDF ]


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共有リンク

Link :


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