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IRF5800 の電気的特性と機能

IRF5800のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5800
部品説明 Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5800 Datasheet, IRF5800 PDF,ピン配置, 機能
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
D
D
G
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD - 93850
IRF5800
HEXFET® Power MOSFET
A
1 6D
VDSS = -30V
2 5D
3 4S
Top View
RDS(on) = 0.085
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
2/8/00

1 Page





IRF5800 pdf, ピン配列
IRF5800
100
10
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
1
-2.70V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25° C
10 TJ = 150° C
1
0.1
2.0
V DS = -15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
-VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -4.0A
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF5800 電子部品, 半導体
IRF5800
0.20
0.16
0.12
ID = -4.0A
0.08
0.04
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.25
0.20
VGS = -4.5V
0.15
0.10
0.05
0.00
0
VGS = -10V
5 10 15
-ID , Drain Current (A)
20
Fig 13. Typical On-Resistance Vs.
Drain Current
6 www.irf.com

6 Page



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[ IRF5800 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
IRF5800

Power MOSFET(Vdss=-30V/ Rds(on)=0.085ohm)

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Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

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