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IRF550 の電気的特性と機能

IRF550のメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF550
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRF550 Datasheet, IRF550 PDF,ピン配置, 機能
Advanced Power MOSFET
IRF550A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 100 V
RDS(on) = 0.04
ID = 40 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
40
28.3
160
+_ 20
640
40
16.7
6.5
167
1.11
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Typ.
--
0.5
--
Max.
0.9
--
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation

1 Page





IRF550 pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.06
0.05 VGS = 10 V
0.04
0.03
0.02 VGS = 20 V
0.01
@ Note : TJ = 25 oC
0.00
0 25 50 75 100 125 150 175
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
3000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
2000
C oss
1000
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRF550A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
100
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =40.0 A
0
0 10 20 30 40 50 60 70 80
QG , Total Gate Charge [nC]


3Pages


IRF550 電子部品, 半導体
IRF550A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF550

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
IRF550A

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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