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IRF540FI の電気的特性と機能

IRF540FIのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF540FI
部品説明 N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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IRF540FI Datasheet, IRF540FI PDF,ピン配置, 機能
IRF540
IRF540FI
N - CHANNEL100V - 00.50- 30A - TO-220/TO-220FI
POWER MOSFET
TYPE
V DSS
RDS(on)
ID
IRF540
I RF5 40F I
100 V < 0.077
100 V < 0.077
30 A
16 A
s TYPICAL RDS(on) = 0.050
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
3
2
1
TO-220
3
2
1
TO-220FI
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
IRF530
IRF 530 FI
100
100
± 20
30 17
21 12
120 120
150 45
1 0.3
- 2000
-65 to 175
175
(1) ISD 30 Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V
oC
oC
April 1998
1/6

1 Page





IRF540FI pdf, ピン配列
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Test Conditions
VDD = 50 V ID = 15 A
RG = 4.7
VGS = 10 V
Qg Total Gate Charge
VDD =80 V ID =30 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V ID =30 A
RG = 4.7 VGS = 10 V
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 50 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD =30 A
VDD = 30 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
IRF540/IRF540FI
Min.
Typ .
20
60
Max.
28
85
Unit
ns
ns
80 110 nC
13 nC
28 nC
Min.
Typ .
22
25
55
Max.
30
35
75
Unit
ns
ns
ns
Min.
Typ .
Max.
30
120
Unit
A
A
175
1.1
12.5
1.5
V
ns
µC
A
3/6


3Pages


IRF540FI 電子部品, 半導体
IRF540/IRF540FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. ..
6/6

6 Page



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共有リンク

Link :


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IRF540FI

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Inchange Semiconductor
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IRF540FI

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

STMicroelectronics
STMicroelectronics


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