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PDF IRF530N Data sheet ( Hoja de datos )
| Número de pieza | IRF530N | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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 1. HEXFET MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de IRF530N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF530N
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 17 A
RDS(ON) ≤ 110 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope using ’trench’
technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The IRF530N is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
drain
123
gate source
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
17
12
68
79
175
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 7.8 A;
energy
tp = 300 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:14
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
150
UNIT
mJ
- 17 A
August 1999
1
Rev 1.100
1 page  
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF530N
Source-Drain Diode Current, IF (A)
20
VGS = 0 V
18
16
14
12
175 C
10
8 Tj = 25 C
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.13. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Maximum Avalanche Current, IAS (A)
100
10
25 C
1 Tj prior to avalanche = 150 C
0.1
0.001
0.01 0.1
1
Avalanche time, tAV (ms)
10
Fig.14. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tAV);
unclamped inductive load
August 1999
5
Rev 1.100
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF530N.PDF ] | |
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