|
|
IRF5305LのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)」です。 |
部品番号 | IRF5305L |
| |
部品説明 | Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF5305Lダウンロード(pdfファイル)リンクがあります。 Total 10 pages
l Advanced Process Technology
l Surface Mount (IRF5305S)
l Low-profile through-hole (IRF5305L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF5305L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.06Ω
ID = -31A
S
D 2 Pak
T O -26 2
Max.
-31
-22
-110
3.8
110
0.71
± 20
280
-16
11
-5.8
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
4/1/99
1 Page 1000
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
IRF5305S/L
1000
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
20µs PU LSE W ID TH
1
TTJc==2255°C°C
A
0.1 1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
-4 .5 V
20µs P ULSE W ID TH
1
TTCJ == 117755°°CC
A
0.1 1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
V DS= -25V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = -27A
1.5
1.0
0.5
0.0
V GS = -10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF5305S/L
VDS L
RG
-20V
tp
D .U.T
IA S
0 .0 1Ω
DR IVER
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
700
ID
TOP -6.6A
600 -11A
BOTTOM -16A
500
400
300
200
100
0 VDD = -25V
25 50 75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ IRF5305L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF5305 | P-channel HEXFET Power MOSFET(Vdss=-55V / Id=-31A) | International Rectifier |
IRF5305 | Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
IRF5305L | Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) | International Rectifier |
IRF5305LPBF | HEXFET Power MOSFET | International Rectifier |