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IRF530のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR」です。 |
部品番号 | IRF530 |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとIRF530ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRF530
N-CHANNEL 100V - 0.115 Ω - 14A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
IRF530
100 V <0.16 Ω
14 A
s TYPICAL RDS(on) = 0.115Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s 175 oC OPERATING TEMPERATURE
t(s)DESCRIPTION
This MOSFET series realized with STMicroelectronics
cunique STripFET™ process has specifically been
udesigned to minimize input capacitance and gate charge.
dIt is therefore suitable as primary switch in advanced
rohigh-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is
Palso intended for any applications with low gate drive
terequirements.
leAPPLICATIONS
os HIGH CURRENT, HIGH SWITCHING SPEED
bss SOLENOID AND RELAY DRIVERS
Os REGULATOR
-s DC-DC & DC-AC CONVERTERS
t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
cABS, AIR-BAG, LAMPDRIVERS, etc.)
roduABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
PVDS Drain-source Voltage (VGS = 0)
teVDGR
Drain-gate Voltage (RGS = 20 kΩ)
leVGS Gate- source Voltage
soID Drain Current (continuous) at TC = 25°C
Ob ID Drain Current (continuous) at TC = 100°C
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
100
100
± 20
14
10
Unit
V
V
V
A
A
IDM(•) Drain Current (pulsed)
56 A
Ptot Total Dissipation at TC = 25°C
60 W
Derating Factor
0.4 W/°C
dv/dt (1) Peak Diode Recovery voltage slope
20 V/ns
EAS (2) Single Pulse Avalanche Energy
70 mJ
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
August 2002
-55 to 175
°C
(1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 14A, VDD = 50V
1/8
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @.
1 Page IRF530
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 7 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 80V ID = 14A VGS= 10V
Min.
Typ.
16
25
16
3.7
4.7
Max.
21
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(off)
Turn-off Delay Time
VDD = 50 V
ID = 7 A
32 ns
tf Fall Time
RG = 4.7Ω, VGS = 10 V
8 ns
(Resistive Load, Figure 3)
t(s)SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ucISD
dISDM (•)
Source-drain Current
Source-drain Current (pulsed)
roVSD (*) Forward On Voltage
ISD = 14 A
VGS = 0
te Ptrr
Qrr
leIRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
so(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
b(•)Pulse width limited by safe operating area.
ISD = 14 A
di/dt = 100A/µs
VDD = 10V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
92
230
5
Max.
14
56
1.6
Unit
A
A
V
ns
nC
A
Obsolete Product(s) - OSafe Operating Area
Thermal Impedance
3/8
3Pages IRF530
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
)Fig. 3: Switching Times Test Circuits For Resistive
t(sLoad
Fig. 4: Gate Charge test Circuit
duct(s) - Obsolete ProducFig. 5: Test Circuit For Inductive Load Switching
Obsolete ProAnd Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRF530 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF530 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
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