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IRF520FIのメーカーはSTMicroelectronicsです、この部品の機能は「N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS」です。 |
部品番号 | IRF520FI |
| |
部品説明 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとIRF520FIダウンロード(pdfファイル)リンクがあります。 Total 9 pages
IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF520
IRF520FI
VDSS
100 V
100 V
R DS( on)
< 0.27 Ω
< 0.27 Ω
ID
10 A
7A
s TYPICAL RDS(on) = 0.23 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC
ID Drain Current (cont.) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1993
Value
I RF 52 0
I RF 520FI
100
100
± 20
10 7
75
40 40
70 35
0. 47
0. 23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9
1 Page ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symb ol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V ID = 5 A
RGS = 4.7 Ω VGS = 10 V
(see test circuit)
ID = 10 A VGS = 10 V
VDD = Max Rating x 0.8
(see test circuit)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 10 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 10 A
VDD = 20 V
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
IRF520/FI
Min.
Typ.
10
50
25
20
15
7
4
Max.
15
75
40
30
25
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
10
40
Unit
A
A
80
0. 22
1.6
V
ns
µC
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
3/9
3Pages IRF520/FI
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit
6/9
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF520FI データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF520FI | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF520FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STMicroelectronics |