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PDF IRF520 Data sheet ( Hoja de datos )
| Número de pieza | IRF520 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF520 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF520
IRF520FI
VDSS
100 V
100 V
R DS( on)
< 0.27 Ω
< 0.27 Ω
ID
10 A
7A
s TYPICAL RDS(on) = 0.23 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC
ID Drain Current (cont.) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1993
Value
I RF 52 0
I RF 520FI
100
100
± 20
10 7
75
40 40
70 35
0. 47
0. 23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9
1 page  
Transconductance
IRF520/FI
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF520.PDF ] | |
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