|
|
Número de pieza | IRF510A | |
Descripción | Advanced Power MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF510A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Advanced Power MOSFET
IRF510A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175°C Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.289 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(2)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.4 Ω
ID = 5.6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
5.6
4
20
±20
63
5.6
3.3
6.5
33
0.22
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
4.51
--
62.5
Units
°C/W
Rev. B1
1 page N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF510A
* Current Regulator ”
50KΩ
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
Vary tp to obtain
required peak ID
LL
ID
EAS
=
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF510A.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF510 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF510 | N-Channel Enhancement-Mode Vertical DMOS Power FETs | Supertex Inc |
IRF510 | 5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRF510 | HEFXFET Power MOSFET (Vdss=100V / Id=5.6A) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |