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IRF4905 の電気的特性と機能

IRF4905のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF4905
部品説明 Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF4905 Datasheet, IRF4905 PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.02
S ID = -74A
TO-220AB
Max.
-74
-52
-260
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

1 Page





IRF4905 pdf, ピン配列
1000
100
V GS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
1000
100
V GS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
IRF4905
1 0 -4.5V
20µs PULS E W IDTH
1
Tc = 25°C
A
0.1 1
10 100
-VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-4.5 V
10
20µs PULSE W IDTH
1
TC = 1 75°C
A
0.1 1 10 100
-VD S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics
1000
TJ = 2 5 °C
100
TJ = 1 7 5 °C
10
V DS = -2 5 V
20µs PULSE W IDTH
1
4
5
6
7
8
9 10A
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = -64A
1.5
1.0
0.5
0.0
VGS = -10 V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRF4905 電子部品, 半導体
IRF4905
VDS
L
RG
-20V
tp
D .U .T
IAS
0 .0 1
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
2500
ID
TO P -1 6A
-27A
2000 BOT TO M -38 A
1500
1000
500
0A
25 50 75 100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



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