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IRF450のメーカーはIntersil Corporationです、この部品の機能は「13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET」です。 |
部品番号 | IRF450 |
| |
部品説明 | 13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとIRF450ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
IRF450
March 1999 File Number 1827.3
13A, 500V, 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF450
TO-204AA
IRF450
NOTE: When ordering, include the entire part number.
Features
• 13A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 Page IRF450
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP
--
--
MAX
13
52
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 13A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs
--
280 600
3.2 7.5
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 9.2mH, RG = 25Ω, peak IAS = 13A. See Figures 14, 15.
1.4
1200
14
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.1
0.001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0001
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1 10
3Pages Test Circuits and Waveforms
IRF450
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
6
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
6 Page | |||
ページ | 合計 : 7 ページ | ||
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