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PDF IRF450 Data sheet ( Hoja de datos )
| Número de pieza | IRF450 | |
| Descripción | 13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
IRF450
March 1999 File Number 1827.3
13A, 500V, 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF450
TO-204AA
IRF450
NOTE: When ordering, include the entire part number.
Features
• 13A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF450
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
10000
8000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
6000
4000
2000
0
0
CISS
COSS
CRSS
2
5 10 2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
VDS ≥ 50V
80µs PULSE TEST
16
12
8
TJ = 25oC
TJ = 150oC
4
0
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
5
2
10
5 TJ = 150oC
2
1
5
TJ = 25oC
2
0.1
0
0.5 1.0 1.5 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 13A
FOR TEST CIRCUIT, SEE FIGURE 18
16
VDS = 100V
12 VDS = 250V
VDS = 400V
8
4
0
0 25 50 75 100 125
Qg(TOT) , TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF450.PDF ] | |
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