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PDF IRF3717 Data sheet ( Hoja de datos )
| Número de pieza | IRF3717 | |
| Descripción | HEXFETPower MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95843
IRF3717
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
VDSS
20V
S
S
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
S
G
HEXFET® Power MOSFET
RDS(on) max
ID
:4.4m @VGS = 10V 20A
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Max.
20
± 20
20
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 10
www.irf.com
1
2/20/04
1 page  
IRF3717
20 2.5
15
2.0
10 ID = 250µA
1.5
5
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
0.01
R2R2
R3R3
R4R4
τCτ
Ri (°C/W)
1.4174
11.3607
τi (sec)
0.000277
0.103855
τ2 τ2
τ3 τ3
τ4 τ4
21.8639 1.362000
15.3721 39.60000
0.1
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
t2
1 10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF3717.PDF ] | |
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