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IRF3707S の電気的特性と機能

IRF3707SのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3707S
部品説明 Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF3707S Datasheet, IRF3707S PDF,ピン配置, 機能
PD - 93937B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
VDSS
30V
IRF3707
IRF3707S
IRF3707L
HEXFET® Power MOSFET
RDS(on) max
12.5m
ID
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707
D2Pak
IRF3707S
TO-262
IRF3707L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
62
52
248
87
61
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
8/22/00

1 Page





IRF3707S pdf, ピン配列
IRF3707/3707S/3707L
1000
100
10
3.5V
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1000
100
10
3.5V
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25 °C
TJ = 175°C
10
3.0
V DS= 15V
20µs PULSE WIDTH
4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 62A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF3707S 電子部品, 半導体
IRF3707/3707S/3707L
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
VGS = 4.5V
VGS = 10V
50 100 150 200
ID , Drain Current ( A )
250
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test circuit
and Waveforms
0.013
0.012
0.011
0.010
ID = 31A
0.009
4.0
5.0 6.0 7.0 8.0 9.0
VGS, Gate -to -Source Voltage (V)
10.0
Fig 13. On-Resistance Vs. Gate Voltage
600
ID
TOP
10.1A
500 20.7A
BOTTOM 24.8A
400
300
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D.U .T
IA S
0.0 1
15V
DRIVER
+
- VD D
A
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF3707

Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

International Rectifier
International Rectifier
IRF3707L

Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

International Rectifier
International Rectifier
IRF3707LPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF3707PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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