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IRF3315 の電気的特性と機能

IRF3315のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=150V/ Rds(on)=0.07ohm/ Id=27A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3315
部品説明 Power MOSFET(Vdss=150V/ Rds(on)=0.07ohm/ Id=27A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF3315 Datasheet, IRF3315 PDF,ピン配置, 機能
APPROVED
PD -91623A
IRF3315
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
G
HEXFET® Power MOSFET
D
VDSS = 150V
RDS(on) = 0.07
ID = 27A
S
TO-220AB
Max.
27
19
108
136
0.91
± 20
350
12
13.6
2.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/09/98

1 Page





IRF3315 pdf, ピン配列
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
INPUT NEW DATA
APPROVED IRF3315
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
INPUT NEW DATA
10 4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
INPUT NEW DATA
TJ = 25 °C
TJ = 175 ° C
V DS= 50V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 27A
2.5 INPUT NEW DATA
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF3315 電子部品, 半導体
IRF3315
APPROVED
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1000
800
TOP
BOTTOM
ID
4.9A
8.5A
12A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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