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IRF323 の電気的特性と機能

IRF323のメーカーはIntersil Corporationです、この部品の機能は「2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF323
部品説明 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF323 Datasheet, IRF323 PDF,ピン配置, 機能
Semiconductor
July 1998
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Features
• 2.8A and 3.3A, 350V and 400V
• rDS(ON) = 1.8and 2.5
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF320
TO-204AA
IRF320
IRF321
TO-204AA
IRF321
IRF322
TO-204AA
IRF322
IRF323
TO-204AA
IRF323
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1569.3

1 Page





IRF323 pdf, ピン配列
IRF320, IRF321, IRF322, IRF323
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
LD
LS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Measured from the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
G
LD
LS
S
Free Air Operation
-
-
-
-
-
-
-
450 -
100 -
20 -
5.0 -
pF
pF
pF
nH
12.5 -
nH
- 2.5 oC/W
- 30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP MAX UNITS
- - 3.3 A
- - 13 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13)
-
- 1.8
trr TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
120 270 600
QRR TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
0.64 1.4 3.0
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25, peak IAS = 3.3A. See Figures 15, 16.
V
ns
µC
5-3


3Pages


IRF323 電子部品, 半導体
IRF320, IRF321, IRF322, IRF323
Typical Performance Curves Unless Otherwise Specified (Continued)
5
PULSE DURATION = 80µs
4
3
2
25oC
150oC
1
0
0 123 45
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
2.0
20
ID = 3.3A
16
12
VDS = 320V
VDS = 200V
VDS = 80V
8
4
0
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF320

N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
IRF320

2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation
IRF320

N-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Fairchild Semiconductor
Fairchild Semiconductor
IRF320

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor


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