DataSheet.jp

IRF3205 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF3205
部品説明 Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 8 pages
		

No Preview Available !

IRF3205 Datasheet, IRF3205 PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD-91279E
IRF3205
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0m
ID = 110A…
S
TO-220AB
Max.
110 …
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
1
01/25/01

1 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRF3205.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRF320

N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
IRF320

2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation
IRF320

N-Channel Power MOSFETs/ 3.0 A/ 350-400 V

Fairchild Semiconductor
Fairchild Semiconductor
IRF320

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap