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IRF2907ZS の電気的特性と機能

IRF2907ZSのメーカーはInternational Rectifierです、この部品の機能は「AUTOMOTIVE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF2907ZS
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF2907ZS Datasheet, IRF2907ZS PDF,ピン配置, 機能
PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z
IRF2907ZS
IRF2907ZL
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power MOSFET
D VDSS = 75V
G RDS(on) = 4.5m‰
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S ID = 75A
TO-220AB
IRF2907Z
D2Pak
IRF2907ZS
TO-262
IRF2907ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
Case-to-Sink, Flat, Greased Surface
kJunction-to-Ambient
jkJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
170
120
75
680
330
2.2
± 20
300
690
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/17/04

1 Page





IRF2907ZS pdf, ピン配列
IRF2907Z/S/L
10000
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100 TJ = 175°C
10 TJ = 25°C
1
0.1
2
VDS = 25V
60µs PULSE WIDTH
4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
200
TJ = 25°C
150
TJ = 175°C
100
50
0
0
VDS = 10V
380µs PULSE WIDTH
25 50 75 100 125
ID,Drain-to-Source Current (A)
150
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRF2907ZS 電子部品, 半導体
IRF2907Z/S/L
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1200
1000
800
ID
TOP 10A
14A
BOTTOM 75A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
3.5
3.0
ID = 250µA
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF2907Z

AUTOMOTIVE MOSFET

International Rectifier
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IRF2907ZL

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IRF2907ZLPbF

(IRF2907ZxPbF) HEXFET Power MOSFET

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IRF2907ZLPbF

Power MOSFET ( Transistor )

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