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IRF2805L PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2805L
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2805L Datasheet, IRF2805L PDF,ピン配置, 機能
AUTOMOTIVE MOSFET
PD - 94428
IRF2805S
IRF2805L
Typical Applications
Climate Control
ABS
Electronic Braking
Windshield Wipers
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 4.7m
S ID = 135AV
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
D2Pak
IRF2805S
TO-262
IRF2805L
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135V
96V
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted, steady state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
06/10/02

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